GeneSiC Semiconductor wins multiple small business grants from US Dept of Energy in FY07
Released on: October 23, 2007, 6:51 am
Press Release Author: GeneSiC Semiconductor Inc.
Press Release Summary: GeneSiC Semiconductor Inc., a key innovator of Silicon Carbide (SiC) devices for high temperature, high power, ultra-high voltage, and detector applications, announces that it won three Small Business Grants from the US Department of Energy during FY07. These grants allow GeneSiC to be able to demonstrate high voltage SiC devices for a variety of Energy Storage, High Energy Physics and Power Grid applications.
Press Release Body: The Projects are as follows: . Continuing on the success achieved in its FY06 Phase I SBIR grant, the Office of Science of the US Dept of Energy has selected GeneSiC's Phase II SBIR grant proposal, and has completed the award formalities. This project is focused on developing multi-kV radio-frequency (RF) SiC power devices for High Energy Physics applications. . A new Phase I SBIR award focused on high current, multi-kV Thyristor-based devices was granted in FY07. This project is geared towards Energy Storage applications. . A FY07 Phase I STTR award focused on optically gated high voltage, high frequency SiC power devices for environments rich in electro-magnetic interference. \"We are pleased with the confidence expressed by various offices within the US Department on Energy in our high power device solutions. These projects will enable GeneSiC to develop industry-leading SiC devices through its unique device solutions\" said Dr. Ranbir Singh, GeneSiC's President. \"Devices being developed in these programs will be critical towards a more-efficient power grid, and will enable critical commercial and military hardware, not yet possible due to the limitations of contemporary Silicon based technologies.\" GeneSiC recently moved into a new 5800 sqft laboratory and office building in Dulles, Virginia with significantly upgraded equipment and personnel infrastructure. The company is aggressively hiring personnel experienced in compound semiconductor device fabrication, power device design and semiconductor detector designs. Additional information about the company and its products may be obtained by calling GeneSiC at 703-996-8200 or by visiting www.genesicsemi.com.
GeneSiC Semiconductor Inc. develops Silicon Carbide (SiC) based semiconductor devices for high temperature, radiation, and power grid applications. This includes development of rectifiers, FETs, bipolar devices as well as particle & photonic detectors. GeneSiC has, or has access to a extensive suite of device design, fabrication, characterization and testing facilities for such devices. GeneSiC capitalizes on its core competency in device and process design to develop the best possible SiC devices for its customers. The company distinguishes itself by providing high quality products with a focus on customer\'s requirements. GeneSiC has prime/sub-contracts from major US Government agencies including US Dept of Energy, Navy, DARPA, Dept of Homeland Security and DTRA.
Web Site: http://www.genesicsemi.com
Contact Details: 43670 Trade Center Place Suite 155 Dulles, VA 20166 703-996-8200 (ph) 703-373-6918 (fax) Info@genesicsemi.com